RT CW operation of InGaN multi-quantum-well structure laser diodes

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

Simulations of laser diodes with nonpolar InGaN multi?quantum?wells

p s s current topics in solid state physics

Room-temperature continuous-wave operation of InGaN multiple-quantum- well laser diodes with an asymmetric waveguide structure

Room-temperature continuous-wave ~cw! operation is demonstrated with InGaN multiple-quantum-well laser diodes containing an asymmetric waveguide structure. Pulsed threshold current densities as low as 5.2 kA/cm have been obtained for ridge-waveguide laser diodes grown on sapphire substrates by metal-organic chemical vapor deposition. For improved thermal management, the sapphire substrate was t...

InGaN-BASED LASER DIODES

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...

InGaN/GaN quantum well interconnected microdisk light emitting diodes